Please use this identifier to cite or link to this item: http://bura.brunel.ac.uk/handle/2438/15285
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dc.contributor.authorMohammadi, V-
dc.contributor.authorNihtianov, S-
dc.contributor.authorFang, C-
dc.date.accessioned2017-10-20T12:23:04Z-
dc.date.available2017-10-20T12:23:04Z-
dc.date.issued2017-10-16-
dc.identifier13247-
dc.identifier.citationMohammadi, V., Nihtianov, S. and Fang, C. (2017) 'A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer', Scientific Reports, 7, 13247, pp. 1 - 9. doi: 10.1038/s41598-017-13100-0.en_US
dc.identifier.urihttps://bura.brunel.ac.uk/handle/2438/15285-
dc.descriptionAn Author Correction to this article was published on 12 October 2021. Available at: https://doi.org/10.1038/s41598-017-13100-0.-
dc.description.abstractCopyright © 2017 The Author(s). The interest in nanostructures of silicon and its dopants has significantly increased. We report the creation of an ultimately-shallow junction at the surface of n-type silicon with excellent electrical and optical characteristics made by depositing an atomically thin boron layer at a relatively low temperature where no doping of silicon is expected. The presented experimental results and simulations of the ab initio quantum mechanics molecular dynamics prove that the structure of this new type of junction differs from all other known rectifying junctions at this time. An analysis of the junction formation has led to the conclusion that the chemical interaction between the surface atoms of crystalline silicon and the first atomic layer of the as-deposited amorphous boron is the dominant factor leading to the formation of a depletion zone in the crystalline silicon which originates from the surface. The simulation results show a very strong electric field across the c-Si/a-B interface systems where the charge transfer occurs mainly from the interface Si atoms to the neighboring B atoms. This electric field appears to be responsible for the creation of a depletion zone in the n-silicon resulting in a rectifying junction formation between the n-silicon and the atomically thin boron layer.en_US
dc.format.extent1 - 9-
dc.format.mediumElectronic-
dc.language.isoenen_US
dc.rightsCopyright © 2017 The Author(s). Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit https://creativecommons.org/licenses/by/4.0/.-
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/-
dc.titleA doping-less junction-formation mechanism between n-silicon and an atomically thin boron layeren_US
dc.typeArticleen_US
dc.identifier.doihttps://doi.org/10.1038/s41598-017-13100-0-
dc.relation.isPartOfScientific Reports-
pubs.publication-statusPublished-
pubs.volume7-
dc.identifier.eissn2045-2322-
dc.rights.holderThe Author(s)-
Appears in Collections:Brunel Centre for Advanced Solidification Technology (BCAST)

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