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DC Field | Value | Language |
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dc.contributor.author | Fang, PX | - |
dc.contributor.author | Nihtianov, S | - |
dc.contributor.author | Sberna, P | - |
dc.contributor.author | Fang, C | - |
dc.date.accessioned | 2021-02-16T10:37:23Z | - |
dc.date.available | 2021-02-16T10:37:23Z | - |
dc.date.issued | 2021-02-09 | - |
dc.identifier | ORCID iD: Chngming Fang https://orcid.org/0000-0003-0915-7453 | - |
dc.identifier | 075301 | - |
dc.identifier.citation | Fang, P.X. et la..(2021) 'Interfaces between crystalline Si and amorphous B: Interfacial interactions and charge barriers', Physical Review B., 103 (7), 075301, pp. 1-x. doi: 10.1103/PhysRevB.103.075301. | en_US |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | https://bura.brunel.ac.uk/handle/2438/22293 | - |
dc.description.abstract | The recently found crystalline Silicon-amorphous Boron (c-Si/a-B) heterojunction has been successfully applied in the detection of short-wave UV photons. These detectors play a decisive role in the progress of nanoelectronics fabrication. The c-Si/a-B heterojunction could not be explained using the existing `instrumentarium' in semiconductor physics. We investigated the c-Si/a-B interfaces using ab initio molecular dynamics simulations. The simulations reveal atomic ordering of the a-B atoms adjacent to both the Sif0 0 1g and Sif1 1 1g substrates. Charge transfer occurs from the interfacial Si to B, thereby forming Si+/B- charge barriers, which induce an electric eld in the nearby regions. The obtained information here is helpful in furthering our understanding of the physics behind the c-Si/a-B junctions, as well as driving the development of a new `instrumentatrium' in solid state physics. | en_US |
dc.format.medium | Print-Electronic | - |
dc.language | English | - |
dc.language.iso | en | en_US |
dc.publisher | American Physical Society | en_US |
dc.rights | Copyright © 2021 American Physical Society. All rights reserved (see https://journals.aps.org/copyrightFAQ.html#post). | - |
dc.rights.uri | https://journals.aps.org/copyrightFAQ.html#post | - |
dc.title | Interfaces between crystalline Si and amorphous B: Interfacial interactions and charge barriers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | https://doi.org/10.1103/PhysRevB.103.075301 | - |
dc.relation.isPartOf | Physical Review B: Condensed Matter and Materials Physics | - |
pubs.issue | 7 | - |
pubs.publication-status | Published | - |
pubs.volume | 103 | - |
dc.identifier.eissn | 1550-235X | - |
dc.rights.holder | American Physical Society | - |
Appears in Collections: | Brunel Centre for Advanced Solidification Technology (BCAST) |
Files in This Item:
File | Description | Size | Format | |
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FullText.pdf | Copyright © 2021 American Physical Society. All rights reserved (see https://journals.aps.org/copyrightFAQ.html#post). | 2.41 MB | Adobe PDF | View/Open |
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