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Please use this identifier to cite or link to this item: http://bura.brunel.ac.uk/handle/2438/5734

Title: Transport mechanisms in porous silicon
Authors: Ray, AK
Mabrook, MF
Nabok, AV
Brown, S
Keywords: Silicon
Elemental semiconductors
Porous materials
Semiconductor thin films
Metal-semiconductor-metal structures
Rectification
Semiconductor junctions
Publication Date: 1998
Publisher: American Institute of Physics
Citation: Journal of Applied Physics, 84(6): 3232-3235, 1998
Abstract: The current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p-type silicon (p-Si) substrates has been investigated using current-voltage I(V) measurements on metal/PS/p-Si/metal devices in the temperature range of 77-300 K. The characteristics for all devices show a rectifying behavior with ideality factor very close to unity. A value of 0.7 eV is obtained for the barrier height at the interface between PS and bulk p-Si at room temperature and the barrier height is found to increase with rising temperature. A band model is proposed in order to explain the observed characteristics.
Description: Copyright @ 1998 American Institute of Physics.
URI: http://jap.aip.org/resource/1/japiau/v84/i6/p3232_s1
http://bura.brunel.ac.uk/handle/2438/5734
DOI: http://dx.doi.org/10.1063/1.368476
ISSN: 0021-8979
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