Please use this identifier to cite or link to this item: http://bura.brunel.ac.uk/handle/2438/11138
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dc.contributor.authorLi, T-
dc.contributor.authorPatel, T-
dc.contributor.authorBanerjee, I-
dc.contributor.authorPearce-Hill, R-
dc.contributor.authorGallop, J-
dc.contributor.authorHao, L-
dc.contributor.authorRay, AK-
dc.date.accessioned2015-07-15T11:10:23Z-
dc.date.available2015-07-24-
dc.date.available2015-07-15T11:10:23Z-
dc.date.issued2015-
dc.identifier.citationJournal of Materials Science: Materials in Electronics, 26(7): 4810 - 4815, (2015)en_US
dc.identifier.issn0957-4522-
dc.identifier.issn1573-482X-
dc.identifier.urihttp://link.springer.com/article/10.1007%2Fs10854-015-3122-0-
dc.identifier.urihttp://bura.brunel.ac.uk/handle/2438/11138-
dc.description.abstractThe exfoliation of oxygenated functional groups from 60 W hydrogen plasma treated graphene oxide films was investigated using X-ray diffractometric (XRD), Raman spectroscopic and atomic force microscopic techniques. The interlayer spacing of the graphene oxide sheets was found from the XRD pattern to decrease from 0.88 to 0.35 nm after plasma treatment. The reduced intensity ratio of the D and G peaks of the Raman spectra indicates a decrease in the crystallite size of the sp<sup>2</sup> domains due to plasma treatment. Atomic force microscope showed the continuous morphology of the plasma treated film. The electrical properties of plasma treated samples spin-coated on silicon were studied using Van Der Pauw and non contacting microwave techniques. The sheet resistivity determined from Van der Pauw measurements was $$1.62\,{\text{M}}\Omega /{\text{sq}}$$1.62MΩ/sq, yielding the value of $$3.1\,{\text{S}}\,{\text{m}}^{ - 1}$$3.1S<sup>m-1</sup> for the bulk conductivity. The charge mobility of $$3.8\,{\text{m}}^{2} \,{\text{V}}^{ - 1} \,{\text{s}}^{ - 1}$$3.8<sup>m2</sup><sup>V-1</sup><sup>s-1</sup> has been determined from Hall measurement technique.en_US
dc.description.sponsorshipDr. Indrani Banerjee is grateful to Commonwealth Association, UK for funding the present research work under the fellowship placement scheme (Grant reference INCF-2014-66).en_US
dc.format.extent4810 - 4815-
dc.languageeng-
dc.language.isoenen_US
dc.publisherSpringer USen_US
dc.subjectOxygenated functional groupsen_US
dc.subjectExfoliationen_US
dc.subject60 W hydrogen plasmaen_US
dc.subjectGraphene oxide filmsen_US
dc.subjectX-ray diffractometric (XRD),en_US
dc.subjectRaman spectroscopicen_US
dc.subjectAtomic force microscopic techniquesen_US
dc.titlePlasma treated graphene oxide films: structural and electrical studiesen_US
dc.typeArticleen_US
dc.identifier.doihttp://dx.doi.org/10.1007/s10854-015-3122-0-
dc.relation.isPartOfJournal of Materials Science: Materials in Electronics-
pubs.issue7-
pubs.volume26-
Appears in Collections:Wolfson Centre for Sustainable Materials Development and Processing

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