Please use this identifier to cite or link to this item:
Title: Impact of low-dose electron irradiation on n+p silicon strip sensors
Authors: Adam, W
Bergauer, T
Dragicevic, M
Friedl, M
Fruehwirth, R
Hoch, M
Hrubec, J
Krammer, M
Treberspurg, W
Waltenberger, W
Alderweireldt, S
Beaumont, W
Janssen, X
Luyckx, S
Van Mechelen, P
Van Remortel, N
Van Spilbeeck, A
Barria, P
Caillol, C
Clerbaux, B
De Lentdecker, G
Dobur, D
Favart, L
Grebenyuk, A
Lenzi, T
Léonard, A
Maerschalk, T
Mohammadi, A
Perniè, L
Randle-Conde, A
Reis, T
Seva, T
Thomas, L
Vander Velde, C
Vanlaer, P
Wang, J
Zenoni, F
Abu Zeid, S
Blekman, F
De Bruyn, I
D'Hondt, J
Daci, N
Deroover, K
Heracleous, N
Keaveney, J
Lowette, S
Moreels, L
Olbrechts, A
Python, Q
Tavernier, S
Van Mulders, P
Van Onsem, G
Van Parijs, I
Strom, DA
Basegmez, S
Bruno, G
Castello, R
Caudron, A
Ceard, L
De Callatay, B
Delaere, C
Du Pree, T
Forthomme, L
Giammanco, A
Hollar, J
Jez, P
Michotte, D
Nuttens, C
Perrini, L
Pagano, D
Quertenmont, L
Selvaggi, M
Vidal Marono, M
Beliy, N
Caebergs, T
Daubie, E
Hammad, GH
Härkönen, J
Lampén, T
Luukka, PR
Mäenpää, T
Peltola, T
Tuominen, E
Tuovinen, E
Eerola, P
Tuuva, T
Beaulieu, G
Boudoul, G
Combaret, C
Contardo, D
Gallbit, G
Lumb, N
Mathez, H
Mirabito, L
Perries, S
Sabes, D
Vander Donckt, M
Verdier, P
Viret, S
Zoccarato, Y
Keywords: Silicon strip sensors;Charge collection;Radiation damage;Surface damage
Issue Date: 2015
Publisher: Elsevier
Citation: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 803: pp. 100 - 112, (2015)
Abstract: The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the 90Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n+p strip sensors is discussed.
ISSN: 0168-9002
Appears in Collections:Dept of Electronic and Computer Engineering Research Papers

Files in This Item:
File Description SizeFormat 
Fulltext.pdf4.6 MBAdobe PDFView/Open

Items in BURA are protected by copyright, with all rights reserved, unless otherwise indicated.