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http://bura.brunel.ac.uk/handle/2438/11558
Title: | Impact of low-dose electron irradiation on n+p silicon strip sensors |
Authors: | Adam, W Bergauer, T Dragicevic, M Friedl, M Fruehwirth, R Hoch, M Hrubec, J Krammer, M Treberspurg, W Waltenberger, W Alderweireldt, S Beaumont, W Janssen, X Luyckx, S Van Mechelen, P Van Remortel, N Van Spilbeeck, A Barria, P Caillol, C Clerbaux, B De Lentdecker, G Dobur, D Favart, L Grebenyuk, A Lenzi, T Léonard, A Maerschalk, T Mohammadi, A Perniè, L Randle-Conde, A Reis, T Seva, T Thomas, L Vander Velde, C Vanlaer, P Wang, J Zenoni, F Abu Zeid, S Blekman, F De Bruyn, I D'Hondt, J Daci, N Deroover, K Heracleous, N Keaveney, J Lowette, S Moreels, L Olbrechts, A Python, Q Tavernier, S Van Mulders, P Van Onsem, G Van Parijs, I Strom, DA Basegmez, S Bruno, G Castello, R Caudron, A Ceard, L De Callatay, B Delaere, C Du Pree, T Forthomme, L Giammanco, A Hollar, J Jez, P Michotte, D Nuttens, C Perrini, L Pagano, D Quertenmont, L Selvaggi, M Vidal Marono, M Beliy, N Caebergs, T Daubie, E Hammad, GH Härkönen, J Lampén, T Luukka, PR Mäenpää, T Peltola, T Tuominen, E Tuovinen, E Eerola, P Tuuva, T Beaulieu, G Boudoul, G Combaret, C Contardo, D Gallbit, G Lumb, N Mathez, H Mirabito, L Perries, S Sabes, D Vander Donckt, M Verdier, P Viret, S Zoccarato, Y |
Keywords: | Silicon strip sensors;Charge collection;Radiation damage;Surface damage |
Issue Date: | 2015 |
Publisher: | Elsevier |
Citation: | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 803: pp. 100 - 112, (2015) |
Abstract: | The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the 90Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n+p strip sensors is discussed. |
URI: | http://www.sciencedirect.com/science/article/pii/S0168900215009602 http://bura.brunel.ac.uk/handle/2438/11558 |
DOI: | http://dx.doi.org/10.1016/j.nima.2015.08.026 |
ISSN: | 0168-9002 |
Appears in Collections: | Dept of Electronic and Electrical Engineering Research Papers |
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