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http://bura.brunel.ac.uk/handle/2438/14105
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DC Field | Value | Language |
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dc.contributor.author | Griffiths, JT | - |
dc.contributor.author | Zhang, S | - |
dc.contributor.author | Rouet-Leduc, B | - |
dc.contributor.author | Fu, WY | - |
dc.contributor.author | Bao, A | - |
dc.contributor.author | Zhu, D | - |
dc.contributor.author | Wallis, DJ | - |
dc.contributor.author | Howkins, A | - |
dc.contributor.author | Boyd, I | - |
dc.contributor.author | Stowe, D | - |
dc.contributor.author | Kappers, MJ | - |
dc.contributor.author | Humphreys, CJ | - |
dc.contributor.author | Oliver, RA | - |
dc.date.accessioned | 2017-02-23T09:31:42Z | - |
dc.date.available | 2015-11-01 | - |
dc.date.available | 2017-02-23T09:31:42Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | NANO LETTERS, 2015, 15 (11), pp. 7639 - 7643 (5) | en_US |
dc.identifier.issn | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000364725400070&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=f12c8c83318cf2733e615e54d9ed7ad5 | - |
dc.identifier.issn | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000364725400070&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=f12c8c83318cf2733e615e54d9ed7ad5 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.issn | 1530-6992 | - |
dc.identifier.uri | http://bura.brunel.ac.uk/handle/2438/14105 | - |
dc.description.abstract | Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices. | en_US |
dc.format.extent | 7639 - 7643 (5) | - |
dc.language | English | - |
dc.language.iso | en | en_US |
dc.publisher | American Chemical Society | en_US |
dc.subject | Science & Technology | en_US |
dc.subject | Physical Sciences | en_US |
dc.subject | Technology | en_US |
dc.subject | Chemistry, Multidisciplinary | en_US |
dc.subject | Chemistry, Physical | en_US |
dc.subject | Nanoscience & Nanotechnology | en_US |
dc.subject | Materials Science, Multidisciplinary | en_US |
dc.subject | Physics, Applied | en_US |
dc.subject | Physics, Condensed Matter | en_US |
dc.subject | Chemistry | en_US |
dc.subject | Science & Technology - Other Topics | en_US |
dc.subject | Materials Science | en_US |
dc.subject | Physics | en_US |
dc.subject | Nanocathodoluminescence | en_US |
dc.subject | scanning transmission electron microscopy | en_US |
dc.subject | InGaN optoelectronics | en_US |
dc.subject | light emitting diodes | en_US |
dc.subject | quantum confined Stark effect | en_US |
dc.subject | silicon doping | en_US |
dc.subject | OPTICAL-PROPERTIES | en_US |
dc.subject | SPATIAL-RESOLUTION | en_US |
dc.subject | DIFFUSION LENGTH | en_US |
dc.subject | GAN | en_US |
dc.subject | CATHODOLUMINESCENCE | en_US |
dc.subject | HETEROSTRUCTURES | en_US |
dc.subject | EFFICIENCY | en_US |
dc.subject | SPECTRA | en_US |
dc.title | Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping | en_US |
dc.type | Article | en_US |
dc.identifier.doi | http://dx.doi.org/10.1021/acs.nanolett.5b03531 | - |
dc.relation.isPartOf | NANO LETTERS | - |
pubs.issue | 11 | - |
pubs.publication-status | Published | - |
pubs.volume | 15 | - |
Appears in Collections: | The Experimental Techniques Centre |
Files in This Item:
File | Description | Size | Format | |
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Fulltext.pdf | 1.99 MB | Adobe PDF | View/Open |
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