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DC Field | Value | Language |
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dc.contributor.author | Ji, X | - |
dc.contributor.author | Qi, D | - |
dc.contributor.author | Dong, Z | - |
dc.contributor.author | Lai, CS | - |
dc.contributor.author | Zhou, G | - |
dc.contributor.author | Hu, X | - |
dc.date.accessioned | 2021-06-28T15:15:43Z | - |
dc.date.available | 2021-06-28T15:15:43Z | - |
dc.date.issued | 2021-06-15 | - |
dc.identifier | ORCiD: Donglian Qi https://orcid.org/0000-0002-6535-2221 | - |
dc.identifier | ORCiD: Chun Sing Lai https://orcid.org/0000-0002-4169-4438 | - |
dc.identifier | 2130020 | - |
dc.identifier.citation | Ji, X. et al. (2021) 'Ag/TiOx nanobelt/Ti configuration', International Journal of Bifurcation and Chaos, 31 (07), pp. 2130020 - 2130020. doi: 10.1142/s0218127421300202. | en_US |
dc.identifier.issn | 0218-1274 | - |
dc.identifier.uri | https://bura.brunel.ac.uk/handle/2438/22911 | - |
dc.description.abstract | Memristive technologies are attractive due to their nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance. For memristive devices, a model corresponding with practical behavioral characteristics is highly favorable for the realization of its neuromorphic system and applications. In this paper, we propose a novel memristor model based on the Ag/TiO<jats:sub>x</jats:sub> nanobelt/Ti configuration, which can reflect three different states (i.e. original stage, transition stage, and resistive switching state) of the physical memristor with a satisfactory fitting precision (greater than 99.88%). Meanwhile, this work gives (1) an insight onto the electrical characteristics of the memristor model under different humidity conditions; (2) the influence of the water molecular concentration on the memristor behavior, which is of importance for the memristor fabrication and subsequent applications. For verification purposes, the proposed three-state switchable memristor is applied into the memristor-based logic implementation. The experimental results demonstrate that the constructed circuit is able to realize basic Boolean logic operations with fast response speed and high efficiency. | en_US |
dc.format.extent | 2130020 - 2130020 | - |
dc.format.medium | Print-Electronic | - |
dc.language | English | - |
dc.language.iso | en | en_US |
dc.publisher | World Scientific Publishing | en_US |
dc.rights | Electronic version of an article published as 'TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration', International Journal of Bifurcation and Chaos, 31, 07, 2021, 2130020-2130020. DOI: 10.1142/s0218127421300202 available at: https://www.worldscientific.com/doi/abs/10.1142/s0218127421300202. Copyright © 2021 World Scientific Publishing. All rights reserved. (see: https://www.worldscientific.com/page/authors/author-rights). | - |
dc.rights.uri | https://www.worldscientific.com/page/authors/author-rights | - |
dc.subject | Memristor | en_US |
dc.subject | Ag/TiOx nanobelt/Ti configuration | en_US |
dc.subject | humidity conditions | en_US |
dc.subject | logic implementation | en_US |
dc.title | TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration | en_US |
dc.type | Article | en_US |
dc.identifier.doi | https://doi.org/10.1142/s0218127421300202 | - |
dc.relation.isPartOf | International Journal of Bifurcation and Chaos | - |
pubs.issue | 07 | - |
pubs.publication-status | Published | - |
pubs.volume | 31 | - |
dc.identifier.eissn | 1793-6551 | - |
dc.rights.holder | World Scientific Publishing | - |
Appears in Collections: | Dept of Electronic and Electrical Engineering Research Papers |
Files in This Item:
File | Description | Size | Format | |
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FullText.pdf | Electronic version of an article published as 'TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration', International Journal of Bifurcation and Chaos, 31, 07, 2021, 2130020-2130020. DOI: 10.1142/s0218127421300202 available at: https://www.worldscientific.com/doi/abs/10.1142/s0218127421300202. Copyright © 2021 World Scientific Publishing. All rights reserved. (see: https://www.worldscientific.com/page/authors/author-rights). | 6.19 MB | Adobe PDF | View/Open |
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