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DC Field | Value | Language |
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dc.contributor.author | Chaure, NB | - |
dc.contributor.author | Cammidge, AN | - |
dc.contributor.author | Chambrier, I | - |
dc.contributor.author | Cook, MJ | - |
dc.contributor.author | Cain, MG | - |
dc.contributor.author | Murphy, CE | - |
dc.contributor.author | Pal, C | - |
dc.contributor.author | Ray, AK | - |
dc.date.accessioned | 2014-03-04T14:36:12Z | - |
dc.date.available | 2014-03-04T14:36:12Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | Science and Technology of Advanced Materials, 12(2), Article 025001, 2011 | en_US |
dc.identifier.issn | 1468-6996 | - |
dc.identifier.uri | http://iopscience.iop.org/1468-6996/12/2/025001 | en |
dc.identifier.uri | http://bura.brunel.ac.uk/handle/2438/8114 | - |
dc.description | © 2011 National Institute for Materials Science | en_US |
dc.description.abstract | Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3V for untreated devices to −2V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones. | en_US |
dc.description.sponsorship | Technology Strategy Board, UK (Project No: TP/6/EPH/6/S/K2536J). | en_US |
dc.language | English | - |
dc.language.iso | en | en_US |
dc.publisher | National Institute for Materials Science | en_US |
dc.subject | Substituted copper phthalocyanine | en_US |
dc.subject | Organic thin film transistor | en_US |
dc.subject | Surface treatment | en_US |
dc.subject | AFM | en_US |
dc.subject | Topology | en_US |
dc.subject | Field effect mobility | en_US |
dc.title | High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | http://dx.doi.org/10.1088/1468-6996/12/2/025001 | - |
pubs.organisational-data | /Brunel | - |
pubs.organisational-data | /Brunel/Brunel Active Staff | - |
pubs.organisational-data | /Brunel/Brunel Active Staff/Wolfson Centre | - |
pubs.organisational-data | /Brunel/Brunel Active Staff/Wolfson Centre/Wolfson | - |
Appears in Collections: | Materials Engineering Wolfson Centre for Sustainable Materials Development and Processing |
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Fulltext.pdf | 736.1 kB | Adobe PDF | View/Open |
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