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DC Field | Value | Language |
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dc.contributor.author | Faris, T | - |
dc.contributor.author | Basova, T | - |
dc.contributor.author | Chaure, NB | - |
dc.contributor.author | Sharma, AK | - |
dc.contributor.author | Durmuş, M | - |
dc.contributor.author | Ahsen, V | - |
dc.contributor.author | Ray, AK | - |
dc.date.accessioned | 2015-07-20T10:40:00Z | - |
dc.date.available | 2014 | - |
dc.date.available | 2015-07-20T10:40:00Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | EPL (Europhysics Letters), 106 (5): 58002, (2014) | en_US |
dc.identifier.issn | 0295-5075 | - |
dc.identifier.issn | 1286-4854 | - |
dc.identifier.uri | http://iopscience.iop.org/0295-5075/106/5/58002/ | - |
dc.identifier.uri | http://bura.brunel.ac.uk/handle/2438/11157 | - |
dc.description.abstract | The device performance of organic thin-film transistors (OTFTs) employing the solution processed films of room temperature liquid-crystalline tetrasubstituted zinc phthalocyanine derivative was found to depend upon the film morphology. Atomic force microscopic and X-Ray diffraction studies show that the annealing at 70° produced a preferentially unidirectional void-free film with improved surface smoothness. The OTFTs with the annealed films exhibited enhanced conductivity, threefold reduction in threshold voltage, a nearly one order of magnitude increase in the on/off ratio and more than one-third reduction of hysteresis in the transfer characteristics. | en_US |
dc.description.sponsorship | This work is sponsored by the Air Force Office of Scientific Research, Air Force Material Command, USAF, under grant No. FA8655-13-1-3018. TB acknowledges the financial support from the Ministry of Education and Science of the Russian Federation. | en_US |
dc.language | eng | - |
dc.language.iso | en | en_US |
dc.publisher | Institute of Physics Publishing | en_US |
dc.subject | Organic thin-film transistors | en_US |
dc.subject | Annealing | en_US |
dc.subject | Grain boundaries | en_US |
dc.title | Effects of annealing on device parameters of organic field effect transistors using liquid-crystalline tetrasubstituted zinc phthalocyanine | en_US |
dc.type | Article | en_US |
dc.identifier.doi | http://dx.doi.org/10.1209/0295-5075/106/58002 | - |
dc.relation.isPartOf | EPL | - |
pubs.issue | 5 | - |
pubs.volume | 106 | - |
Appears in Collections: | Wolfson Centre for Sustainable Materials Development and Processing |
Files in This Item:
File | Description | Size | Format | |
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Fulltext.doc | 1.33 MB | Microsoft Word | View/Open |
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