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|Title:||Dielectric measurements on sol-gel derived titania films|
|Keywords:||Metal–insulator–semiconductor device;Hopping conduction;Complex dielectric modulus;Relaxation time|
|Citation:||Journal of Electronic Materials, (2017)|
|Abstract:||Alternating current (AC) impedance measurements were performed on thick nanostructured sol-gel derived anatase titania films on ultrasonically cleaned (100) p-silicon substrates at temperatures ranging from to over a frequency range between 20Hz and 1 MHz. The frequency dependent behaviour of the AC conductivity obeys the universal power law and the values of the effective hopping barrier and hopping distance were found to be and from an analysis due to the correlated barrier hopping model. The dielectric relaxation was identified as a thermally activated non-Debye process involving an activation energy of .|
|Appears in Collections:||Dept of Mechanical Aerospace and Civil Engineering Research Papers|
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