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Issue Date | Title | Author(s) |
---|---|---|
22-Aug-2022 | Interfacial charge transfer and Schottky barriers at c-Si/a-In heterojunctions | Fang, PX; Nihtianov, S; Sberna, P; de Wijs, GA; Fang, C |
10-Mar-2020 | Stability, geometry and electronic properties of BH<sub>n</sub> (n = 0 to 3) radicals on the Si{0 0 1}3×1:H surface from first-principles | Fang, C; Mohammodi, V; Nihtianov, S; Sluiter, M |
12-Oct-2021 | Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer | Mohammadi, V; Nihtianov, S; Fang, C |
9-Feb-2021 | Interfaces between crystalline Si and amorphous B: Interfacial interactions and charge barriers | Fang, PX; Nihtianov, S; Sberna, P; Fang, C |
16-Oct-2017 | A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer | Mohammadi, V; Nihtianov, S; Fang, C |
26-Jan-2021 | Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview | Sberna, P; Fang, PX; Fang, C; Nihtianov, S |
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