Please use this identifier to cite or link to this item:
Title: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
Authors: Fang, C
Mohammadi, V
Nihtianov, S
Issue Date: 2017
Citation: Scientific Reports, 2017, 7 pp. 13247-1 - 13247-9
Abstract: The interest in nanostruc tures of silicon and its dopants has significantly increased. We report the creation of an ultimately-shallow junction at the surface of n-type silicon with excellent electrical and optical characteristics made by depositing an atomically thin boron layer at a relatively low temperature where no doping of silicon is expected. The presented experimental results and simulations of the ab initio quantum mechanics molecular dynamics prove that the structure of this new type of junction differs from all other known rectifying junctions at this time. An analysis of the junction formation has led to the conclusion that the chemical interaction between the surface atoms of crystalline silicon and the first atomic layer of the as-deposited amorphous boron is the dominant factor leading to the formation of a depletion zone in the crystalline silicon which originates from the surface. The simulation results show a very strong electric field across the c-Si/a-B interface systems where the charge transfer occurs mainly from the interface Si atoms to the neighboring B atoms. This electric field appears to be responsible for the creation of a depletion zone in the n-silicon resulting in a rectifying junctionformation between the n-silicon and the atomically thin boron layer.
ISSN: 2045-2322
Appears in Collections:Dept of Mechanical Aerospace and Civil Engineering Research Papers

Files in This Item:
File Description SizeFormat 
Fulltext.pdf2.44 MBAdobe PDFView/Open

Items in BURA are protected by copyright, with all rights reserved, unless otherwise indicated.