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Please use this identifier to cite or link to this item:
http://bura.brunel.ac.uk/handle/2438/23947Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mohammadi, V | - |
| dc.contributor.author | Nihtianov, S | - |
| dc.contributor.author | Fang, C | - |
| dc.date.accessioned | 2022-01-15T10:10:29Z | - |
| dc.date.available | 2022-01-15T10:10:29Z | - |
| dc.date.issued | 2021-10-12 | - |
| dc.identifier | 20579 | - |
| dc.identifier.citation | Mohammadi, V., Nihtianov, S. and Fang, C. (2021) 'Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer', Scientific Reports, 11, 20579, pp. 1-2. doi: 10.1038/s41598-021-99821-9. | en_US |
| dc.identifier.uri | https://bura.brunel.ac.uk/handle/2438/23947 | - |
| dc.format.extent | 1 - 2 | - |
| dc.format.medium | Electronic | - |
| dc.language | en | - |
| dc.language.iso | en_US | en_US |
| dc.publisher | Springer Science and Business Media LLC | en_US |
| dc.rights | Copyright © 2021 The Author(s). Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit https://creativecommons.org/licenses/by/4.0/. | - |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | - |
| dc.title | Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | https://doi.org/10.1038/s41598-021-99821-9 | - |
| dc.relation.isPartOf | Scientific Reports | - |
| pubs.issue | 1 | - |
| pubs.publication-status | Published | - |
| pubs.volume | 11 | - |
| dc.identifier.eissn | 2045-2322 | - |
| Appears in Collections: | Brunel Centre for Advanced Solidification Technology (BCAST) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| FullText.pdf | 754.28 kB | Adobe PDF | View/Open |
This item is licensed under a Creative Commons License
