Please use this identifier to cite or link to this item:
http://bura.brunel.ac.uk/handle/2438/25025
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Molas, MR | - |
dc.contributor.author | Tyurnina, AV | - |
dc.contributor.author | Zólyomi, V | - |
dc.contributor.author | Ott, AK | - |
dc.contributor.author | Terry, DJ | - |
dc.contributor.author | Hamer, MJ | - |
dc.contributor.author | Yelgel, C | - |
dc.contributor.author | Babiński, A | - |
dc.contributor.author | Nasibulin, AG | - |
dc.contributor.author | Ferrari, AC | - |
dc.contributor.author | Fal'ko, VI | - |
dc.contributor.author | Gorbachev, R | - |
dc.date.accessioned | 2022-08-03T12:27:56Z | - |
dc.date.available | 2020-03-16 | - |
dc.date.available | 2022-08-03T12:27:56Z | - |
dc.date.issued | 2020-03-16 | - |
dc.identifier.citation | Molas, M.R., Tyurnina, A.V., Zólyomi, V., Ott, A.K., Terry, D.J., Hamer, M.J., Yelgel, C., Babiński, A., Nasibulin, A.G., Ferrari, A.C., Fal'ko, V.I., and Gorbachev, R. (2020) 'Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers', Faraday Discussions, 227, pp. 163 - 170. doi: 10.1039/d0fd00007h. | en_US |
dc.identifier.issn | 1359-6640 | - |
dc.identifier.uri | https://bura.brunel.ac.uk/handle/2438/25025 | - |
dc.description | This article is part of the themed collection: Chemistry of 2-dimensional materials: beyond graphene. | en_US |
dc.description | Footnote: Electronic supplementary information (ESI) available: S1: selection rules for E′ and E′′ phonons. S2: Γ-point frequencies in FL-GaSe and InSe. S3: resonance effects. See: https://doi.org/10.1039/d0fd00007h | - |
dc.description.abstract | III–VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations. | en_US |
dc.description.sponsorship | National Science Centre, Poland (grants no. 2017/24/C/ST3/00119, 2017/27/B/ST3/00205), EPSRC ARCHER RAP grant (e547), EU Graphene Flagship and Quantum Technology Flagships, The Scientific and Technological Research Council of Turkey (TUBITAK) through BIDEB-2219 programme (2018-1), EPSRC CDT Graphene-NOWNANO and Graphene Technology, EPSRC Doctoral Prize Fellowship, Royal Society Research Fellowship, Samsung Advanced Institute of Technology (SAIT), ERC Grant Hetero2D, EPSRC Grants EP/K01711X/1, EP/K017144/1, EP/N010345/1 and EP/L016057/1. | en_US |
dc.format.extent | 163 - 170 | - |
dc.format.medium | Print-Electronic | - |
dc.language | English | - |
dc.language.iso | en | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.rights | Open Access Article. Published on 16 March 2020. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. | - |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | - |
dc.title | Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | https://doi.org/10.1039/d0fd00007h | - |
dc.relation.isPartOf | Faraday Discussions | - |
pubs.publication-status | Published | - |
pubs.volume | 227 | - |
dc.identifier.eissn | 1364-5498 | - |
dc.rights.holder | The Authors and Royal Society of Chemistry | - |
Appears in Collections: | Brunel Centre for Advanced Solidification Technology (BCAST) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
FullText.pdf | 6.7 MB | Adobe PDF | View/Open |
This item is licensed under a Creative Commons License