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Title: A study of the turn-on mechanisms in thyristors
Authors: Yan, William Fong
Advisors: Hogarth, CA
Fulop, W
Keywords: Plasma spreading velocity;Signal current;Gain value;n-p-n transistor;Turning-on area
Issue Date: 1975
Abstract: Mechanisms of thyristor turn-on wore studied. An attempt was made to relate the ‘on’ plasma spreading velocity to the small signal current gain value of the n-p-n transistor section of the thyristor. The extent to which the thyristor turns on initially largely affects the speed of turning-on the device. A model is proposed to calculate the initial turned-on area of thyristors.
Description: This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.
Appears in Collections:Brunel University Theses

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