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DC Field | Value | Language |
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dc.contributor.author | Sberna, P | - |
dc.contributor.author | Fang, PX | - |
dc.contributor.author | Fang, C | - |
dc.contributor.author | Nihtianov, S | - |
dc.date.accessioned | 2021-02-07T14:40:10Z | - |
dc.date.available | 2021-02-07T14:40:10Z | - |
dc.date.issued | 2021-01-26 | - |
dc.identifier.citation | Sberna, P. et al. (2021) 'Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview', Crystals, 11, 108, pp. 1-16. doi: 10.3390/cryst11020108. | en_US |
dc.identifier.uri | https://bura.brunel.ac.uk/handle/2438/22218 | - |
dc.description.abstract | Copyright © 2021 by the authors. The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the junction created by the chemical vapor deposition of amorphous boron on n-type crystalline silicon was a shallow p-n junction, although experimental results could not provide evidence for such a conclusion. Only recently, quantum-mechanics based modelling revealed the unique nature and the formation mechanism of this new junction. Here, we review the initiation and the history of understanding the a-B/c-Si interface (henceforth called the “boron-silicon junction”), as well as its importance for the microelectronics industry, followed by the scientific perception of the new junctions. Future developments and possible research directions are also discussed. | en_US |
dc.format.extent | 1 - 16 | - |
dc.language | English | - |
dc.language.iso | en_US | en_US |
dc.publisher | MDPI AG | en_US |
dc.rights | Copyright: © 2021 by the authors. LicenseeMDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the CreativeCommonsAttribution (CCBY) license (https://creativecommons.org/licenses/by/4.0/). | - |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | - |
dc.subject | rectifying junction | en_US |
dc.subject | photodiode | en_US |
dc.subject | chemical vapor deposition | en_US |
dc.subject | first principle molecular dynamics | en_US |
dc.subject | electronegativity | en_US |
dc.title | Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview | en_US |
dc.type | Article | en_US |
dc.identifier.doi | https://doi.org/10.3390/cryst11020108 | - |
dc.relation.isPartOf | Crystals | - |
pubs.publication-status | Published | - |
pubs.volume | 11 | - |
dc.rights.holder | The authors | - |
Appears in Collections: | Brunel Centre for Advanced Solidification Technology (BCAST) Dept of Mechanical and Aerospace Engineering Research Papers |
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FullText.pdf | Copyright: © 2021 by the authors. LicenseeMDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the CreativeCommonsAttribution (CCBY) license (https://creativecommons.org/licenses/by/4.0/). | 815.03 kB | Adobe PDF | View/Open |
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