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Title: Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
Authors: Molas, MR
Tyurnina, AV
Zólyomi, V
Ott, AK
Terry, DJ
Hamer, MJ
Yelgel, C
Babiński, A
Nasibulin, AG
Ferrari, AC
Fal'ko, VI
Gorbachev, R
Issue Date: 16-Mar-2020
Publisher: Royal Society of Chemistry
Citation: Molas, M.R., Tyurnina, A.V., Zólyomi, V., Ott, A.K., Terry, D.J., Hamer, M.J., Yelgel, C., Babiński, A., Nasibulin, A.G., Ferrari, A.C., Fal'ko, V.I., and Gorbachev, R. (2020) 'Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers', Faraday Discussions, 227, pp. 163 - 170. doi: 10.1039/d0fd00007h.
Abstract: III–VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.
Description: This article is part of the themed collection: Chemistry of 2-dimensional materials: beyond graphene.
Footnote: Electronic supplementary information (ESI) available: S1: selection rules for E′ and E′′ phonons. S2: Γ-point frequencies in FL-GaSe and InSe. S3: resonance effects. See:
ISSN: 1359-6640
Appears in Collections:Brunel Centre for Advanced Solidification Technology (BCAST)

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